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An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

dc.rights.licenseLicencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC BY-NC-ND 4.0)
dc.contributor.authorArnaud Maceira, Alfredo
dc.contributor.authorChacón Rodríguez, Alfonso
dc.contributor.authorMiguez de Mori, Matías Rafael
dc.contributor.authorGak Szollosy, Joel
dc.contributor.authorPuyol, Rafael
dc.date.accessioned2021-10-21T20:52:17Z
dc.date.available2021-10-21T20:52:17Z
dc.date.issued2019
dc.identifier.urihttps://hdl.handle.net/10895/1552
dc.description.abstractIn this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.es
dc.description.sponsorshipAgencia Nacional de Investigación e Innovación
dc.format.mimetypeapplication/pdf
dc.language.isoenes
dc.publisherIEEEes
dc.relation.ispartof10th IEEE Latin American Symposium on Circuits & Systems (LASCAS), 2019.
dc.subjectAnalog integrated circuitses
dc.subjectCMOSes
dc.subjectLinearization techniqueses
dc.subjectAnalog filterses
dc.subjectMOS resistores
dc.titleAn asymmetrical bulk-modified composite MOS transistor with enhanced linearityes
dc.typeArtículoes


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